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銅鋅錫硫帶邊電子結構及缺陷態的光學表征

Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4

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摘要

利用吸收、光電流和光致發光等光譜表征并結合理論報道,分析了缺陷態豐富的銅鋅錫硫半導體材料的光學帶隙、帶尾態和深淺雜質能級,揭示了SnZn相關的缺陷態是影響銅鋅錫硫帶邊電子結構的關鍵因素,其中高濃度的中性缺陷簇[2CuZn+SnZn]能導致帶隙明顯窄化,而離子性缺陷簇[CuZn+SnZn]是主要的深施主缺陷態,同時存在的大量帶尾態引起帶邊相關的光致發光峰明顯紅移。貧銅富鋅條件下,適當減少錫含量,可有效抑制與SnZn相關的缺陷簇,并避免帶隙的窄化。

Abstract

The bandedge electronic structure including the optical bandgap, band-tail states, and deep/shallow donor and acceptor levels in Cu2ZnSnS4 semiconductor was analyzed by absorption, photocurrent and photoluminescence spectroscopy, and the theoretical reports. It is revealed that the SnZn-related defect in Cu2ZnSnS4 with abundant defect states is one of the key factors affecting the band-edge electronic structure. High concentration of the neutral defect cluster [2CuZn+SnZn] can narrow the band gap substantially, while the partially-passivated (ionic) defect cluster [CuZn+SnZn] is the main deep donor defect. A large number of band-tail states are responsible for the obvious red-shift of the bandedge-related photoluminescence transition energy. These detrimental defects related to SnZn can be effectively suppressed by properly reducing the Sn content in the copper-poor and zinc-rich growth condition, which also avoids the narrowing of the optical bandgap of the Cu2ZnSnS4 absorption layer.

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DOI:10.11972/j.issn.1001-9014.2020.01.013

所屬欄目:Infrared Spectroscopy and Spectral Analysis

基金項目:國家自然科學基金; 航空科學基金; 國家重點研發計劃; National Natural Science Foundation of China; 61874045, 61574057, 61574059┫; Aeronautical Science Foundation of China; National Key R&D Program of China;

收稿日期:2019-09-16

修改稿日期:--

網絡出版日期:2020-03-12

作者單位    點擊查看

Su-Yu MA:Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai20024, China
Chuan-He MA:Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai20024, China
Xiao-Shuang LU:Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai20024, China
Guo-Shuai LI:Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai20024, China
Lin SUN:Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai20024, China
Ye CHEN:Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai20024, China
Fang-Yu YUE:Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai20024, China
Jun-Hao CHU:Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai20024, ChinaNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai00083, China

聯系人作者:Ye CHEN(ychen@ee.ecnu.edu.cn); Fang-Yu YUE(fyyue@ee.ecnu.edu.cn);

備注:國家自然科學基金; 航空科學基金; 國家重點研發計劃; National Natural Science Foundation of China; 61874045, 61574057, 61574059┫; Aeronautical Science Foundation of China; National Key R&D Program of China;

【1】M Ravindiran and C Praveenkumar. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Renewable and Sustainable Energy Reviews. 94, 317-329(2018).

【2】M Kumar, A Dubey and N Adhikari. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Energy & Environmental Science. 8(11), 3134-3159(2015).

【3】W Wang, M T Winkler and O Gunawan. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Advanced Energy Materials. 4(7), (2014).

【4】Q J Guo, H W Hillhouse and R Agrawal. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Journal of the American Chemical Society. 131(33), 11672-11673(2009).

【5】W Shockley and H J Queisser. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Journal of Applied Physics. 32(3), 510-519(1961).

【6】S Chen, A Walsh and X G Gong. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Advanced Materials. 25(11), 1522-1539(2013).

【7】G Rey, G Larramona and S Bourdais. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Solar Energy Materials and Solar Cells. 179, 142-151(2018).

【8】K S Lim, S M Yu and S Seo. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Materials Science in Semiconductor Processing. 89, 194-200(2019).

【9】K Tanaka, Y Miyamoto and H Uchiki. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Physica Status Solidi a-Applications and Materials Science. 203(11), 2891-2896(2006).

【10】D P Halliday, R Claridge and M C J Goodman. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Journal of Applied Physics. 113(22), (2013).

【11】C Kim and S Hong. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Journal of Alloys and Compounds. 799, 247-255(2019).

【12】J Tauc, R Grigorovici and A Vancu. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Physica Status Solidi (b). 15(2), 627-637(1966).

【13】P K Sarswat and M L Free. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Physica B: Condensed Matter. 407(1), 108-111(2012).

【14】T Schmidt, K Lischka and W Zulehner. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Physical Review B. 45(16), 8989-8994(1992).

【15】I Dirnstorfer, M Wagner and D M Hofmann. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Physica Status Solidi a-Applied Research. 168(1), 163-175(1998).

【16】G DaviesG Davies. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Physics Reports. 176(3-4), 83-188(1989).

【17】S Chen, L-W Wang and A Walsh. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Applied Physics Letters. 101(22), (2012).

【18】S Chen, J-H Yang and X G Gong. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Physical Review B. 81(24), (2010).

【19】K G Lisunov, M Guk and A Nateprov. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4. Solar Energy Materials and Solar Cells. 112, 127-133(2013).

引用該論文

Su-Yu MA,Chuan-He MA,Xiao-Shuang LU,Guo-Shuai LI,Lin SUN,Ye CHEN,Fang-Yu YUE,Jun-Hao CHU. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4[J]. Journal of Infrared and Millimeter Waves, 2020, 39(1): 92-98

Su-Yu MA,Chuan-He MA,Xiao-Shuang LU,Guo-Shuai LI,Lin SUN,Ye CHEN,Fang-Yu YUE,Jun-Hao CHU. 銅鋅錫硫帶邊電子結構及缺陷態的光學表征[J]. 紅外與毫米波學報, 2020, 39(1): 92-98

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