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退火溫度對電子束蒸發沉積硅薄膜結構和光學性能的影響

The influence of annealing temperature on the structure and optical properties of silicon films deposited by electron beam evaporation

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摘要

系統研究了退火溫度對硅薄膜結構和光學性能的影響。通過電子束蒸發工藝制備硅薄膜,然后在氮氣保護下對薄膜樣品在200~500°C范圍內進行退火處理。使用XRD、拉曼光譜、電子自旋共振和透射光譜測量等方法對薄膜樣品進行了表征。結果顯示,隨著退火溫度的升高,非晶硅薄膜結構有序度在短程和中程范圍內得到改善,同時缺陷密度顯著降低。當樣品在400°C退火后,消光系數k由6.14×10-3下降到最小值1.02×10-3 (1000 nm),這是由于此時硅薄膜缺陷密度也降到最低,約為沉積態薄膜的五分之一。試驗結果表明,硅薄膜在適當的溫度下退火可以有效地降低近紅外區膜層的光學吸收,這對硅薄膜在光學薄膜器件研制中具有重要應用。

Abstract

In this paper, the influence of annealing temperature on the structure and optical properties of silicon films was systemically investigated. Silicon films were deposited by electron beam evaporation and then annealed in N2 atmosphere within a temperature range from 200 to 500 °C. The films were characterized by X-ray diffraction (XRD), Raman spectroscopy, electronic-spin resonance (ESR) and optical transmittance measurement, respectively. With annealing temperature increased, the amorphous network order of silicon films was improved on the short and medium range and the defect density decreased remarkably. When sample being annealed at 400°C, the extinction coefficient k decreased from 6.14×10-3 to a minimum value of 1.02×10-3 (at 1000 nm), which was due to the lowest defect density, about one fifth of the as-deposited sample. The results showed that annealing at an appropriate temperature could effectively reduce the optical absorption of silicon films in the near infrared region, which were very critical for the application in optical thin film coating devices.

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補充資料

DOI:10.11972/j.issn.1001-9014.2020.01.001

所屬欄目:Materials and Devices

基金項目:the National Natural Science Foundation of China; Innovation Program of Shanghai Institute of Technical Physics, Chinese Academy of Sciences;

收稿日期:2019-04-17

修改稿日期:--

網絡出版日期:2020-03-12

作者單位    點擊查看

Bao-Jian LIU:Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
Wei-Bo DUAN:Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
Da-Qi LI:Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
De-Ming YU:Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
Gang CHEN:Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
Ding-Quan LIU:Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China

聯系人作者:Wei-Bo DUAN(duanweibo@mail.sitp.ac.cn)

備注:the National Natural Science Foundation of China; Innovation Program of Shanghai Institute of Technical Physics, Chinese Academy of Sciences;

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引用該論文

Bao-Jian LIU,Wei-Bo DUAN,Da-Qi LI,De-Ming YU,Gang CHEN,Ding-Quan LIU. The influence of annealing temperature on the structure and optical properties of silicon films deposited by electron beam evaporation[J]. Journal of Infrared and Millimeter Waves, 2020, 39(1): 1-5

Bao-Jian LIU,Wei-Bo DUAN,Da-Qi LI,De-Ming YU,Gang CHEN,Ding-Quan LIU. 退火溫度對電子束蒸發沉積硅薄膜結構和光學性能的影響[J]. 紅外與毫米波學報, 2020, 39(1): 1-5

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